IRG 2
Fundamentals of Amorphous Oxide Semiconductors
Michael J. Bedzyk, materials science and engineering
Robert P. H. Chang, materials science and engineering
Vinayak P. Dravid, materials science & engineering
Gabriela Gonzalez-Aviles, physics, depaul university
Matthew A. Grayson, electrical engineering and computer science
Tobin J. Marks, chemistry
Thomas O. Mason, materials science and engineering
Julia E. Medvedeva, physics, missouri university of science and technology
Peter Voorhees, materials science and engineering
The ultimate goal of IRG 2 is a transformative materials science (processing-structure-properties) understanding of amorphous oxide semiconductor (AOS) materials, leading to improved materials and enabling their applications. In particular, potential outcomes include knowledge-based approaches (vis-a-vis trial and error) for optimizing AOS properties in critical areas such as annealing/structural relaxation, carrier generation, control of sub-gap bulk and interface states, mobility enhancement, and facile/low-temperature deposition methodologies. By employing a systematic IRG-based approach, IRG 2 strives to make significant advances toward resolving far-reaching science questions about AOS materials, as well as facilitating the discovery of new AOS classes. In addition to active matrix organic light-emitting diode (AMOLED) and active matrix liquid-crystal display (AMLCD) applications, there are many other technological applications on the near and far horizons, including UV detectors, fully transparent displays, integrated on-glass electronics, flexible electronics, and energy-conversion devices and systems. Furthermore, IRG 2 hopes to develop one or more predictive models for the design and synthesis of complex amorphous oxide thin films with superior and unique optical, electrical, and thermal properties. IRG 2 also envisions broadening the ramifications of this amorphous semiconductor research to extend to amorphous oxides in general, one example being high-k amorphous oxide insulators (dielectrics), as well as opening the door to new amorphous nitrides, carbides, etc.
Project Highlights:
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