Potential Profiling of a Nanowire Transistor

Semiconductor nanowires are a platform for the development of nano-enabled devices. The operating principles of 1-D devices may deviate from conventional models, so nanoscale probes of their electrical properties are needed to explore new behaviors and validate new device models. Northwestern researchers have used photocurrent imaging to determine the local electrostatic potential in nanowire transistors under a range of operating conditions. A quantitative elucidation of the operational principles establishes a more fundamental understanding and promotes optimization of nanomaterials-based devices.

photcurrent

Potential profiles of nanowire transistor under varying biasing conditions showing channel pinch-off with current saturation at large VDS.

 

Jonathan E. Allen, Eric R. Hemesath, Daniel E. Perea, and Lincoln J. Lauhon

Allen, J. E.; Hemesath, E. R.; Perea, D. E.; and L. J. Lauhon; "Scanning Photocurrent Microscopy Analysis of Si Nanowire Field-Effect Transistors Fabricated by Surface Etching of the Channel," Nano Letters, ASAP, DOI: 10.1021/nl803924z. ABSTRACT

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The Materials Research Science and Engineering Center (MRSEC) is supported by the National Science Foundation under NSF Award Number DMR-0520513. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of the National Science Foundation.
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